An Automotive Low-Power EMC Robust Brokaw Bandgap Voltage Reference

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F20%3APU132437" target="_blank" >RIV/00216305:26220/20:PU132437 - isvavai.cz</a>
Result on the web
<a href="https://ieeexplore.ieee.org/document/8949821" target="_blank" >https://ieeexplore.ieee.org/document/8949821</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/TEMC.2019.2958926" target="_blank" >10.1109/TEMC.2019.2958926</a>

Result language
angličtina
Original language name
An Automotive Low-Power EMC Robust Brokaw Bandgap Voltage Reference
Original language description
This article proposes an electromagnetic compatibility improved bandgap voltage reference with a low current consumption of only 3.5 uA in an automotive environment with a wide temperature range from -40 degrees C to 160 degrees C and a high electromagnetic interference (EMI) robustness. The proposed reference is based on the well-known Brokaw bandgap with only five bipolar transistors in the bandgap core including collector current leakage compensation. We analyzed parasitic effects in the bandgap core such as the influence of parasitic capacitances between the substrate and the collectors of these bipolar transistors as well as the impact of the operational amplifier. We made recommendations on how to improve the bandgap EMI robustness. Simulation results were compared with measurements on a test chip. The measurement results showed excellent EMI robustness.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20201 - Electrical and electronic engineering

Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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