Estimating the Power BJT Excess Charge Recombination Time Constant

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F20%3APU137473" target="_blank" >RIV/00216305:26220/20:PU137473 - isvavai.cz</a>
Result on the web
<a href="https://www.fekt.vut.cz/conf/EEICT/archiv/sborniky/EEICT_2020_sbornik_1.pdf" target="_blank" >https://www.fekt.vut.cz/conf/EEICT/archiv/sborniky/EEICT_2020_sbornik_1.pdf</a>
DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Estimating the Power BJT Excess Charge Recombination Time Constant
Original language description
The paper demonstrates an experimental way of estimating the excess minority carrierscharge stored within the the power bipolar transistor in the saturation mode, i.e. with both junctionsforward-biased, as a reference to future IGBT switching action analysis. The method is based onanalyzing the transient turn-off base current waveforms at different conditions right before this event.The base current is known to supply the minority carriers within the device. Estimating the recom-bination time constant serves as a basal precondition for further identification of the excess chargestorage depending on various operating conditions and retrospectively an accurate identification ofpower BJT and IGBT various partial stage of switching action.
Czech name
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Czech description
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Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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