Fabrication and Characterization of Thermally Oxidized Tungsten-Based Thin Films for Application in Cold Field Emission Sources
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F23%3APU149612" target="_blank" >RIV/00216305:26220/23:PU149612 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Fabrication and Characterization of Thermally Oxidized Tungsten-Based Thin Films for Application in Cold Field Emission Sources
Original language description
Thermal oxidation is a methodology employed to generate thin oxide coatings on surfaces. Oxide coatings have demonstrated utility across diverse applications, including cold field electron emission sources. In the realm of commercial microscopy applications, tungsten remains a choice for cold field emission purposes [1] [2]. Its desirable attributes can be further enhanced through the deposition of a thin layer. This not only helps emission characteristics but also extends the operational lifespan of the emitter. Tungsten oxide, recognized for its exceptional resistance to corrosive agents and chemical assaults, owes its durability to its stable crystal lattice and the robust chemical bonds formed between tungsten and oxygen atoms. Several techniques have been employed to achieve this objective, each with distinct advantages and drawbacks [1] [2]. For this work, termooxidation emerged as the chosen method due to its capacity for achieving uniform material coverage and its accessibility without the nec
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
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OECD FORD branch
20506 - Coating and films
Result continuities
Project
<a href="/en/project/FW03010504" target="_blank" >FW03010504: Development of in-situ techniques for characterization of materials and nanostructures</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2023
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů