Emulating Multimemristive Behavior of Silicon Nanowire-Based Biosensors by Using CMOS-Based Implementations
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F24%3APU151550" target="_blank" >RIV/00216305:26220/24:PU151550 - isvavai.cz</a>
Result on the web
<a href="https://ieeexplore.ieee.org/document/10410212" target="_blank" >https://ieeexplore.ieee.org/document/10410212</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/JSEN.2024.3353669" target="_blank" >10.1109/JSEN.2024.3353669</a>
Alternative languages
Result language
angličtina
Original language name
Emulating Multimemristive Behavior of Silicon Nanowire-Based Biosensors by Using CMOS-Based Implementations
Original language description
The research presented in this article draws inspiration from previous efforts aimed at replicating the functions of various solid-state memristors using a variety of materials. The memristor circuit emulator serves as a cost-effective tool for circuit designers, enabling them to experiment with the diverse electrical characteristics of corresponding solid-state memristors. This article specifically focuses on the circuit-based emulation of silicon nanowire (SiNW) known for its effectiveness in biosensing applications. First, a fully floating memristor emulator has been presented based on a voltage differencing current conveyor (VDCC) and an operational transconductance amplifier (OTA)-controlled resistor, along with a grounded capacitance. Furthermore, the proposed memristor emulator was realized by employing integrated cells based on the discussed technology, and the simulation/experimental results are presented and analyzed. The experiments also confirmed the nonvolatile behavior of the realized memristor. The results demonstrate that the real-time implementation of the proposed emulator can accurately generate hysteretic behavior in both incremental and decremental memristive mode. Finally, the incremental and decremental pinched hysteresis loop (PHL) responses generated by the proposed emulator have been utilized to replicate the various types of memristive responses offered by SiNW by adding a simple extension to the circuit.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20200 - Electrical engineering, Electronic engineering, Information engineering
Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2024
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
IEEE SENSORS JOURNAL
ISSN
1530-437X
e-ISSN
1558-1748
Volume of the periodical
24
Issue of the periodical within the volume
6
Country of publishing house
US - UNITED STATES
Number of pages
9
Pages from-to
8036-8044
UT code for WoS article
001197673400086
EID of the result in the Scopus database
2-s2.0-85182929631