Locally resolved topography and spectroscopy of semiconductors (with lateral resolution better than of 250 nm)
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F98%3APU37579" target="_blank" >RIV/00216305:26220/98:PU37579 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Locally resolved topography and spectroscopy of semiconductors (with lateral resolution better than of 250 nm)
Original language description
Locally resolved topography of semiconductor surface and jonction has been investigated and first results presnted.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/OC%20523.40" target="_blank" >OC 523.40: Nanostructures: Optical and Electrical Characteristics</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
1998
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proc. of 5th Int.Conf. Electronic devices and systems 1998
ISBN
80-214-1198-8
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
173-176
Publisher name
Neuveden
Place of publication
Brno
Event location
Brno
Event date
Nov 30, 1998
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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