Charge carrier transport in semiconductors: a fractal approach
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26310%2F12%3APU97234" target="_blank" >RIV/00216305:26310/12:PU97234 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Charge carrier transport in semiconductors: a fractal approach
Original language description
The knowledge of parameters influencing the charge carrier transport is a crucial requirement for the characterization of electrical properties of materials. In this paper the theory of charge transport and injection current for trap-free low conductivity material and insulator containing charge carrier traps is presented in fractals formalism
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/FR-TI1%2F144" target="_blank" >FR-TI1/144: *Multicomponent electronic systems based on organic substances</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů