Modeling of Plasmon-Enhanced Photoluminescence of Si Nanocrystals Embedded in Thin Silicon-Rich Oxinitride Layer

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F16%3APU118805" target="_blank" >RIV/00216305:26620/16:PU118805 - isvavai.cz</a>
Result on the web
<a href="http://przyrbwn.icm.edu.pl/APP/PDF/129/a129z1ap14.pdf" target="_blank" >http://przyrbwn.icm.edu.pl/APP/PDF/129/a129z1ap14.pdf</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.12693/APhysPolA.129.A-70" target="_blank" >10.12693/APhysPolA.129.A-70</a>

Result language
angličtina
Original language name
Modeling of Plasmon-Enhanced Photoluminescence of Si Nanocrystals Embedded in Thin Silicon-Rich Oxinitride Layer
Original language description
Plasmon-enhanced photoluminescence of silicon nanocrystals embedded in silicon-rich oxinitride thin film is calculated using finite-difference time-domain simulations. Emitters are represented as point-like dipoles and the photoluminescence enhancement is calculated depending on the emitter’s position and polarization with respect to the plasmonic metal nanoparticle placed on top of the layer. We show that the photoluminescence enhancement is dominated by the excitation enhancement even for tuning the metal nanoparticle size to the emission wavelength.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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