Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F17%3APU127366" target="_blank" >RIV/00216305:26620/17:PU127366 - isvavai.cz</a>
Result on the web
<a href="https://onlinelibrary.wiley.com/doi/abs/10.1002/adfm.201700384" target="_blank" >https://onlinelibrary.wiley.com/doi/abs/10.1002/adfm.201700384</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/adfm.201700384" target="_blank" >10.1002/adfm.201700384</a>
Alternative languages
Result language
angličtina
Original language name
Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching
Original language description
We report an investigation of the optical and structural properties of wurtzite phase AlxGa1−xN/AlNstructure grown on Si(111) within the compositional range of 0 ≤ x ≤ 1. The study focuses on providingessential physical quantities for the fabrication process control, namely the composition dependenceof phonon mode energy and refractive index. Three complementary techniques, infrared ellipsometry,Raman spectroscopy and X-ray diffraction, have been used to minimize uncertainties in our analysis.Based on the high quality and nearly strain-free AlxGa1−xN/AlN double layer samples, we determined thecalibration curve for the A1(LO) phonon mode. We have also constructed the ellipsometry model whichuses a-priori knowledge of experimentally measured A1(TO) phonon mode frequencies. From the bestmodel fit to the collected ellipsometry spectra of the entire sample series, we obtained the anisotropicrefractive indices of the AlxGa1−xN alloys with a very satisfactory accuracy.
Czech name
—
Czech description
—
Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
<a href="/en/project/LM2015041" target="_blank" >LM2015041: CEITEC Nano</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
ADVANCED FUNCTIONAL MATERIALS
ISSN
1616-301X
e-ISSN
1616-3028
Volume of the periodical
27
Issue of the periodical within the volume
33
Country of publishing house
DE - GERMANY
Number of pages
7
Pages from-to
859-865
UT code for WoS article
000409117500001
EID of the result in the Scopus database
—