Investigation of electrical transport in semiconductor heterostructure devices coupled strongly to the light field
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F19%3APU143887" target="_blank" >RIV/00216305:26620/19:PU143887 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Investigation of electrical transport in semiconductor heterostructure devices coupled strongly to the light field
Original language description
ntersubband Polaritons [1] are quasi-particles that form under strong light-matter coupling conditions in semiconductor heterostructures. The two main requirements are a high-Q tunable cavity and a suitable intersubband transition. Intersubband polaritons are predicted to enable novel applications such as the intersubband polariton laser [2]. The most characteristic feature of intersubband polaritons is their avoided-crossing property. When the detuning between the cavity resonance and the intersubband transition is very small (i.e. the cavity resonance frequency equals the intersubband transition energy) the two absorptions caused by the cavity and the intersubband transitions become indistinguishable. For the matter part we used triple-barrier resonant tunneling diodes (TBRTDs) [3]. TBRTDs are semiconductor heterostructures that consist of two quantum wells. When applying an electric field, the eigen-energies of the quantum wells can align, which leads to a resonant tunneling current. This causes sharp peaks in the IV-characteristic of the devices. TBRTDs also feature intersubband transitions, which are crucial for the formation of intersubband polaritons. The intersubband transition of interest is located at 100 meV
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
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OECD FORD branch
10306 - Optics (including laser optics and quantum optics)
Result continuities
Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Optics InfoBase Conference Papers
ISBN
978-1557-528-20-9
ISSN
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e-ISSN
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Number of pages
1
Pages from-to
1-1
Publisher name
Neuveden
Place of publication
neuveden
Event location
Mnichov
Event date
Jun 23, 2019
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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