Nanostructured boron doped diamond enhancing the photoelectrochemical performance of TiO2/BDD heterojunction anodes

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F20%3APU133646" target="_blank" >RIV/00216305:26620/20:PU133646 - isvavai.cz</a>
Result on the web
<a href="https://www.sciencedirect.com/science/article/pii/S0042207X18324618" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0042207X18324618</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.vacuum.2019.109006" target="_blank" >10.1016/j.vacuum.2019.109006</a>

Result language
angličtina
Original language name
Nanostructured boron doped diamond enhancing the photoelectrochemical performance of TiO2/BDD heterojunction anodes
Original language description
Photoelectrochemical (PEC) water splitting provides a promising way for development of sustainable methods of hydrogen generation and water treatment without chemicals. In this paper we report on the development of a unique PEC electrode consisting of nanostructured p-type boron doped diamond (BDD) layers covered by n-type TiO2 thin film. The influence of nanostructuring and boron doping level, as well as the thickness of TiO2 film on PEC properties was investigated. As-grown and plasma-nanostructured BDD thin films with two doping levels (B/C = 1 000 ppm and 10 000 ppm in gas phase) were utilized as substrates for deposition of 20, 100 and 500 nm TiO2 layers using RF magnetron sputtering. The highest photocurrent (60 μ A/cm2 and 3.2 mA/cm2 at 0 and 2 V vs Ag/AgCl respectively) was obtained in case of structured BDD electrode with B/C ratio in gas phase 1 000 ppm, covered by a 500 nm thick TiO2 layer. The experiment confirmed the favorable impact of both nanostructuring and p-n junction contributing tothe hole injection.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
20402 - Chemical process engineering

Project
<a href="/en/project/FV10477" target="_blank" >FV10477: Combined Plasma Source Technology for Processing of Advanced Coatings</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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