Anodic formation of HfO2 nanostructure arrays for resistive switching application

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F21%3APU142239" target="_blank" >RIV/00216305:26620/21:PU142239 - isvavai.cz</a>
Result on the web
<a href="https://www.confer.cz/nanocon/2020/3692-anodic-formation-of-hfo2-nanostructure-arrays-for-resistive-switching-application" target="_blank" >https://www.confer.cz/nanocon/2020/3692-anodic-formation-of-hfo2-nanostructure-arrays-for-resistive-switching-application</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.37904/nanocon.2020.3692" target="_blank" >10.37904/nanocon.2020.3692</a>

Result language
angličtina
Original language name
Anodic formation of HfO2 nanostructure arrays for resistive switching application
Original language description
Thin dielectric films are actively investigated as materials for novel resistive random-access memories based on resistive switching effect in metal/insulator/metal structures. Thin HfO2 films are of particular interest due to the high thermal stability, low operating voltages of resulting devices, and complementary metal-oxide-semiconductor technology compatibility of this material. In this study, we investigate the resistive switching behavior of nanostructured HfO2 film embedded in a porous anodic alumina matrix. The film was synthesized via self-organized electrochemical anodizing of a sputter-deposited Al/Hf bilayer on a Si substrate in an oxalic acid solution. The film was investigated by scanning electron microscopy. Simple metal/insulator/metal devices were prepared by sputter-deposition of Pt top electrodes through a shadow mask onto the nanostructured film. Assembled devices were characterized by I-V measurements. A bipolar eight-wise resistive switching was obtained, demonstrating a highly repeatable and stable low-voltage behavior in a set potential range. The achieved results indicate the high potential of the anodizing technique as an alternative to commonly used methods for producing insulating thin films for resistive random-access memory application.
Czech name
—
Czech description
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Project
<a href="/en/project/LM2018110" target="_blank" >LM2018110: CzechNanoLab research infrastructure</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2021
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings 12th International Conference on Nanomaterials - Research & Application
ISBN
978-80-87294-98-7
ISSN
—
e-ISSN
—
Number of pages
5
Pages from-to
122-126
Publisher name
TANGER LTD
Place of publication
SLEZSKA
Event location
Brno, Hotel Voroněž
Event date
Oct 21, 2020
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000664505500020

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