Near-field luminescence of two-dimensional semiconductors

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F21%3APU150767" target="_blank" >RIV/00216305:26620/21:PU150767 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Near-field luminescence of two-dimensional semiconductors

Original language description

Two-dimensional semiconductors are ideal light sources for on-chip integration. They exhibit strong luminescence, and are capable of single-photon emission. Since the wavelength of the light is considerably larger than the physical dimensions of the emitter, near-field handling of the emission with a deeply subwavelength spatial resolution would be of great importance. Here we present fully near-field photoluminescence study of two-dimensional semiconductors, with a surface plasmon interference device used for the excitation and scanning near-field optical microscopy for the collection.

Czech name

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Czech description

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Type

O - Miscellaneous

CEP classification

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OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2021

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů