Chemical vapor deposition: a potential tool for wafer scale growth of two-dimensional layered materials

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F22%3APU147271" target="_blank" >RIV/00216305:26620/22:PU147271 - isvavai.cz</a>

Result on the web

<a href="https://iopscience.iop.org/article/10.1088/1361-6463/ac928d" target="_blank" >https://iopscience.iop.org/article/10.1088/1361-6463/ac928d</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1361-6463/ac928d" target="_blank" >10.1088/1361-6463/ac928d</a>

Result language

angličtina

Original language name

Chemical vapor deposition: a potential tool for wafer scale growth of two-dimensional layered materials

Original language description

The rapidly growing demand for high-performance and low-power electronic and photonic devices has driven attention towards novel two-dimensional (2D) layered materials. In this regard, 2D layered materials, including graphene, molybdenum disulfide (MoS2), and newly discovered phosphorene, have the potential to take over the existing semiconductor industry due to their intriguing features, such as excellent electrical conductivity, strong light-matter interaction, and especially the ability to scale down the resulting device to the atomic level. However, to explore the full potential of these materials in various technological applications, it is essential to develop a large-scale synthesis method that can provide uniform, defect-free thin film. The chemical vapor deposition (CVD) technique has been proven to produce large-scale and less defective 2D crystals with reasonably good quality and uniformity compared to other elaboration techniques, such as molecular beam epitaxy. This article discusses whether CVD may improve 2D layered materials growth, including graphene and MoS2, and whether it can be used to grow phosphorene. Only a few attempts have been made using CVD-like methods to grow phosphorene directly on the substrate. Still, one has to go long to establish a proper CVD method for phosphorene synthesis.

Czech name

—

Czech description

—

Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2022

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Physics D - Applied Physics

ISSN

0022-3727

e-ISSN

1361-6463

Volume of the periodical

55

Issue of the periodical within the volume

47

Country of publishing house

GB - UNITED KINGDOM

Number of pages

18

Pages from-to

„“-„“

UT code for WoS article

000861003800001

EID of the result in the Scopus database

2-s2.0-85139644869