Nature of electrically detected magnetic resonance in highly nitrogen-doped 6<i>H</i>-SiC single crystals
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F24%3APU155952" target="_blank" >RIV/00216305:26620/24:PU155952 - isvavai.cz</a>
Result on the web
<a href="https://journals.aps.org/prb/abstract/10.1103/PhysRevB.110.125205" target="_blank" >https://journals.aps.org/prb/abstract/10.1103/PhysRevB.110.125205</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1103/PhysRevB.110.125205" target="_blank" >10.1103/PhysRevB.110.125205</a>
Alternative languages
Result language
angličtina
Original language name
Nature of electrically detected magnetic resonance in highly nitrogen-doped 6<i>H</i>-SiC single crystals
Original language description
This work focuses on unraveling electron paramagnetic resonance (EPR) and electrically detected magnetic resonance (EDMR) properties of n-type 6H silicon carbide (SiC) single crystals with high concentrations of uncompensated nitrogen (N) donors, which is essential for fundamental understanding of spin-related phenomena, developing spin-based devices, optimizing materials and devices, and advancing research in quantum information and spintronics. Utilizing low-temperature multifrequency EPR spectroscopy (9.4-395.12 GHz), we identified two intense signals labeled as S line and S1 line in the 6H-SiC crystals with N D - N A approximate to 8 x 1018 and 4 x 1019 cm-3. In addition, in 6H-SiC crystals with N D - N A approximate to 8 x 1018 cm-3, a low-intensity triplet from N donors substituting the quasicubic "k2" nonequivalent position (Nk2) was observed. The S line [g perpendicular to = 2.0029(2), g|| = 2.0038(2)] was assigned to the exchange interaction of conduction electrons and Nk2, while the S1 line [g perpendicular to = 2.0030(2), g|| = 2.0040(2)] is caused by the exchange spin coupling of localized N donors at the "k1" and "k2" positions. The S1 line was observed in high-frequency EDMR spectra of 6H-SiC with N D - N A approximate to 8 x 1018 cm-3, and its emergence was explained by an enhancement of the hopping conductivity due to the EPR-induced temperature increase mechanism. No EDMR spectra were found to occur in the 6H-SiC crystals with N D - N A approximate to 4 x 1019 cm-3, which is close to the critical donor concentration value for a semiconductor-metal transition. Thus it can be concluded that this N donor concentration is too high for the appearance of spin-dependent scattering and too low for the emergence of EPR-induced hopping mechanisms in 6H-SiC.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20501 - Materials engineering
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2024
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
PHYSICAL REVIEW B
ISSN
2469-9950
e-ISSN
2469-9969
Volume of the periodical
110
Issue of the periodical within the volume
12
Country of publishing house
US - UNITED STATES
Number of pages
8
Pages from-to
„“-„“
UT code for WoS article
001361359900002
EID of the result in the Scopus database
2-s2.0-85203586312