Tailoring Tungsten Oxide Layers for Cold Field Emission Cathodes: Anodization and Thermal Oxidation Approaches

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F25%3APU156357" target="_blank" >RIV/00216305:26620/25:PU156357 - isvavai.cz</a>
Result on the web
<a href="https://pubs.acs.org/doi/abs/10.1021/acsaelm.5c00241" target="_blank" >https://pubs.acs.org/doi/abs/10.1021/acsaelm.5c00241</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acsaelm.5c00241" target="_blank" >10.1021/acsaelm.5c00241</a>

Result language
angličtina
Original language name
Tailoring Tungsten Oxide Layers for Cold Field Emission Cathodes: Anodization and Thermal Oxidation Approaches
Original language description
This study explores the optimization of tungsten oxide layers formed via thermal oxidation and anodization for cold field emission applications. Surface modifications can enhance tungsten emitters by improving the emission stability and reducing ion-induced damage. Polycrystalline tungsten samples were treated using two oxidation methods: thermal oxidation (at 550-750 degrees C, 103-104 Pa) and anodization (in 0.33 mol/L H3PO4 at 5-35 V). Lower temperatures and pressures (550 degrees C, 103 Pa) produced smoother (R a similar to 23 nm) and uniform oxide layers (similar to 240 nm thick), improving the high-voltage stability (7.5-8.5 kV). Anodized layers, while less stable at high voltages, exhibited enhanced emission at lower operational voltages (similar to 5.5-7 kV). Field emission microscopy confirmed that thermally oxidized layers perform better under high electrostatic fields, whereas anodized layers offer a rapid response and lower threshold voltages. These findings demonstrate that both oxidation techniques are scalable and tunable for optimizing cold field emitters, with tailored properties suited to specific applications in electron microscopy and related technologies.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20200 - Electrical engineering, Electronic engineering, Information engineering

Project
<a href="/en/project/LM2018110" target="_blank" >LM2018110: CzechNanoLab research infrastructure</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Publication year
2025
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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