Graphene enhanced resonant Raman spectroscopy of gallium nitride nanocrystals

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F26%3A0199231" target="_blank" >RIV/00216305:26620/26:0199231 - isvavai.cz</a>
Alternative codes found
RIV/70883521:28110/25:63597019
Result on the web
<a href="https://pubs.aip.org/aip/apl/article/126/23/233503/3349435/Graphene-enhanced-resonant-Raman-spectroscopy-of" target="_blank" >https://pubs.aip.org/aip/apl/article/126/23/233503/3349435/Graphene-enhanced-resonant-Raman-spectroscopy-of</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/5.0270386" target="_blank" >10.1063/5.0270386</a>

Result language
angličtina
Original language name
Graphene enhanced resonant Raman spectroscopy of gallium nitride nanocrystals
Original language description
The scattering of lattice excitations (phonons) with the photoexcited charge carriers is of a major concern in optoelectronic devices. Here, the resonant Raman scattering will be utilized to study an exciton-phonon interaction in GaN nanocrystals, further enhanced by the underlying graphene. Raman spectroscopy using various excitation energies shows how the exciton-phonon interaction behaves, unveiling the scattering strength. The origin of the interaction is in the condition of resonance, which is directly observed in the temperature resolved spectra. Most importantly, the underlying graphene strongly enhances the coupling of phonons and excitons. Consequently, an enhanced resonant Raman spectrum of GaN nanocrystals possessing clearly observable phonon overtones up to the fourth order has been obtained. It has been demonstrated that the responsible effect is the electron transfer between nanocrystals and the underlying graphene. The utilization of such an increased coupling effect can be beneficial for a study of the charge carrier scattering in semiconducting nanomaterials, analysis of their crystal quality, improvement of sensor sensitivity, and in the subsequent development of new-generation optoelectronic devices.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10300 - Physical sciences

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2025
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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