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Reducing Nonradiative Recombination Losses in Tin-Based Perovskite LEDs Utilizing a Self-Assembled Monolayer

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F26%3A0200637" target="_blank" >RIV/00216305:26620/26:0200637 - isvavai.cz</a>

  • Alternative codes found

    RIV/00216275:25310/25:39923280

  • Result on the web

    <a href="https://pubs.acs.org/doi/pdf/10.1021/acsami.5c15797" target="_blank" >https://pubs.acs.org/doi/pdf/10.1021/acsami.5c15797</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1021/acsami.5c15797" target="_blank" >10.1021/acsami.5c15797</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Reducing Nonradiative Recombination Losses in Tin-Based Perovskite LEDs Utilizing a Self-Assembled Monolayer

  • Original language description

    Tin-based perovskites are emerging as less-toxic alternatives to their lead-based counterparts for optoelectronic devices, such as solar cells and light-emitting diodes (LEDs). However, despite their great potential, the efficiency of pure red tin-based perovskite LEDs (Sn-LEDs) still lags behind that of lead-based perovskite LEDs (Pb-LEDs), partly due to the poor electron blocking at the PEDOT:PSS/perovskite interface. This leads to detrimental nonradiative recombination pathways that limit the performance of the LEDs. In this study, we replaced the conventional PEDOT:PSS layer with the self-assembled monolayer (SAM) EADR03, presenting, to the best of our knowledge, the first report of a SAM employed as a hole-selective layer in Sn-LEDs. EADR03 simultaneously acted as an efficient electron-blocking and hole-injecting layer, thereby reducing interfacial recombination losses and enhancing the LEDs' performance. As a result, we achieved a 3-fold enhancement in external quantum efficiency, propelling the advancement of more efficient tin-based perovskite LEDs.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    21001 - Nano-materials (production and properties)

Result continuities

  • Project

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2025

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    ACS Applied Materials & Interfaces

  • ISSN

    1944-8244

  • e-ISSN

    1944-8252

  • Volume of the periodical

    17

  • Issue of the periodical within the volume

    44

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    7

  • Pages from-to

    60937-60943

  • UT code for WoS article

    001599920900001

  • EID of the result in the Scopus database