Strained structure of power vertical PNP transistor

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F26821532%3A_____%2F10%3A%230000051" target="_blank" >RIV/26821532:_____/10:#0000051 - isvavai.cz</a>
Result on the web
<a href="http://www.silicon.cz/" target="_blank" >http://www.silicon.cz/</a>
DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Strained structure of power vertical PNP transistor
Original language description
The integration of PNP vertical power transistors into new technology process ON50 with trenches is described. The comparison of standard grid layout and new strainer layout with highly doped Poly-Si Emitters in highly doped base is done. The characteristics parameters have been analyzed. Some conclusions for improvement have been suggested.
Czech name
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Czech description
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Project
<a href="/en/project/FR-TI1%2F582" target="_blank" >FR-TI1/582: *Research and development of advanced complementary bipolar technology for manufacturing of integrated circuits.</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
SILICON 2010 - 12th Scientific and Business Conference
ISBN
978-80-254-7361-0
ISSN
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e-ISSN
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Number of pages
428
Pages from-to
299-308
Publisher name
TECON Scientific, s.r.o.
Place of publication
Rožnov pod Radhoštěm, Česká republika
Event location
Rožnov pod Radhoštěm, Česká republika
Event date
Jan 1, 2010
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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