Prototyp výkonového akčního členu s GaN tranzistory pro průmyslové aplikace

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F45277397%3A_____%2F26%3AN0000001" target="_blank" >RIV/45277397:_____/26:N0000001 - isvavai.cz</a>

Result on the web

<a href="https://www.ima.cz/grantove-projekty/gan4ap/" target="_blank" >https://www.ima.cz/grantove-projekty/gan4ap/</a>

DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Prototyp výkonového akčního členu s GaN tranzistory pro průmyslové aplikace

Original language description

The main outcome of the GaN4AP project is a functional prototype of an intelligent power actuator designed for industrial applications, utilizing advanced Gallium Nitride (GaN) power transistors. The primary objective of the development was to verify the applicability of next-generation GaN semiconductor devices in industrial automation systems, where high energy efficiency, fast switching performance, and compact dimensions are essential requirements. The prototype was developed by IMA in cooperation with Charles University (UNIPRA) and builds upon previous experience gained from the use of SiC power devices in the WinSiC4AP project. The developed prototype represents a multi-channel power actuator capable of controlling power loads through high-speed switching of GaN transistors. The system consists of an STM32-based control module, a dedicated GaN gate driver, and a three-channel power stage. The hardware design incorporates a new generation of SGT65R65AL power transistors manufactured by STMicroelectronics. These transistors enable operation at high switching frequencies while maintaining low switching losses. Compared with conventional silicon transistors, GaN devices provide higher electron mobility, lower parasitic capacitance, lower on-state resistance, and superior high-frequency performance. These characteristics enable the development of more energy-efficient devices with higher power density and reduced dimensions. The prototype hardware was implemented as a modular system. The control board provides PWM signal generation and user interface control. The power stage consists of three independent power channels intended for driving high-power LED modules or other industrial loads. The device also includes a real-time clock (RTC), EEPROM memory for retaining configuration after power interruptions, and an OLED display for local visualization of operating parameters. During the development, an extensive series of functional and laboratory tests was carried out to verify the electrical performance of the prototype. The testing focused on the correct operation of the individual electronic modules, operational stability, and especially the high-frequency switching characteristics of the power stage. All planned validation tests were successfully completed, confirming compliance with the defined technical requirements. Particular attention was devoted to evaluating the switching performance of the GaN transistors. Laboratory measurements demonstrated a significant improvement in both rise and fall times compared with conventional solutions. At the gate driver output, the rise time was reduced from approximately 54 ns to 15 ns, while the fall time decreased from 75 ns to 8 ns. Measurements performed directly on the power load showed rise times of approximately 4 ns and fall times between 4.8 ns and 5.5 ns, confirming the exceptional switching capabilities of the selected GaN technology. Experimental results revealed that the primary limitation of the system was no longer the GaN transistor itself but rather the gate driver used to control it. Theoretical analysis and practical measurements confirmed the potential for operation at very high switching frequencies. Based on the measured pulse characteristics, a maximum switching frequency of approximately 8.3 MHz at a 50% duty cycle was achieved, significantly exceeding the gate driver's specified operating limit of 2 MHz. This result demonstrates the outstanding potential of GaN technology for future high-frequency power electronic applications. The project also successfully achieved all predefined functional objectives. The prototype supports three-channel PWM control of power LEDs, automatic restoration of settings after power interruption, local visualization of operating parameters on an OLED display, and temperature monitoring of the power stage. The thermal behaviour and operation under various load conditions were also verified. Several key parameters, particularly the maximum switching frequency and thermal performance, exceeded the expectations established at the beginning of the project. The developed prototype represents a significant step towards future industrial products based on GaN power technology. The solution successfully demonstrated the technical feasibility of high-performance GaN transistors and established a technological foundation for the development of a new generation of compact, energy-efficient, and intelligently controlled power devices intended for industrial automation, energy management, lighting technology, and other applications requiring fast and efficient power switching.

Czech name

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Czech description

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Type

G_funk - Functional sample

CEP classification

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OECD FORD branch

20201 - Electrical and electronic engineering

Project

<a href="/en/project/8A21006" target="_blank" >8A21006: GaN for Advanced Power Applications</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2026

Confidentiality

C - Předmět řešení projektu podléhá obchodnímu tajemství (§ 504 Občanského zákoníku), ale název projektu, cíle projektu a u ukončeného nebo zastaveného projektu zhodnocení výsledku řešení projektu (údaje P03, P04, P15, P19, P29, PN8) dodané do CEP, jsou upraveny tak, aby byly zveřejnitelné.

Internal product ID

SPwrA_FV__IMA_GaN_2025

Numerical identification

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Technical parameters

Základní charakteristika Typ výsledku: Inteligentní výkonový akční člen (Power Actuator) pro průmyslové aplikace. Technologie výkonového spínání: GaN (Gallium Nitride). Architektura: Tříkanálový výkonový modul s možností nezávislého PWM řízení jednotlivých kanálů. Řídicí jednotka: STM32 (ARM Cortex, řada F7). Výkonová část Použitý výkonový tranzistor: STMicroelectronics SGT65R65AL. Technologie tranzistoru: e-mode GaN Power Transistor. Maximální pracovní napětí tranzistoru: 650 V. Odpor v sepnutém stavu (RDS(on)): 65 mΩ. Maximální proud tranzistoru: 30 A. Cílová výkonová oblast aplikací: stovky wattů. Řízení a regulace Způsob řízení: PWM (Pulse Width Modulation). Počet PWM kanálů: 3. Synchronizace kanálů: podporována návrhem systému. Funkce RTC (Real Time Clock): ano. Nevolatilní paměť EEPROM pro uchování nastavení po výpadku napájení: ano. OLED displej pro lokální zobrazení provozních parametrů: ano.

Economical parameters

Dosažené výsledky jsou součástí interního know-how společnosti IMA a budou využívány pro další rozvoj produktového portfolia v oblasti výkonové elektroniky a průmyslové automatizace. Výsledek vytváří technologický základ pro vývoj budoucích produktů a přispívá k posílení konkurenceschopnosti společnosti na domácím i zahraničním trhu.

Application category by cost

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Owner IČO

45277397

Owner name

Institut mikroelektronickych aplikaci s.r.o.

Owner country

CZ - CZECH REPUBLIC

Usage type

A - K využití výsledku jiným subjektem je vždy nutné nabytí licence

Licence fee requirement

A - Poskytovatel licence na výsledek požaduje licenční poplatek

Web page

https://www.ima.cz/grantove-projekty/gan4ap/