Domain back-switching due to the free charge injection under the AFM tip studied by phase field simulations

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F46747885%3A24220%2F11%3A%230001790" target="_blank" >RIV/46747885:24220/11:#0001790 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Domain back-switching due to the free charge injection under the AFM tip studied by phase field simulations
Original language description
A phase field simulations of the polarisation reversal against the applied electric field in ferroelectric thin films, which is observed after poling of a ferroelectric film with a large electric field applied to a conductive tip of an atomic force microscope (AFM), is presented. Recent advances in the development of hard-disk-like data storage device that uses ferroelectric nano-domains in ferroelectric single crystals stimulate the interest of scientists in the study of domain dynamics. It is known that free charges, which can be injected from the AFM tip during the polarization reversal process into the ferroelectric film or on its surface, have a great effect on the stability of the reversed domains and can yield to several quite different scenarios during the domain reversal process. Since the role of free charges is not understood in great details yet, the aforementioned issues have motivated the study presented in this paper, where we will analyse the role of free charges during
Czech name
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Czech description
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Project
<a href="/en/project/GAP204%2F10%2F0616" target="_blank" >GAP204/10/0616: Modern piezoelectric perovskites: lattice vibrations and domain walls</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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