Bulk and interface second harmonic generation in the Si3N4 thin films deposited via ion beam sputtering

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F46747885%3A24220%2F21%3A00008690" target="_blank" >RIV/46747885:24220/21:00008690 - isvavai.cz</a>
Alternative codes found
RIV/61389021:_____/21:00555694
Result on the web
<a href="https://iopscience.iop.org/article/10.1088/2040-8986/abe450" target="_blank" >https://iopscience.iop.org/article/10.1088/2040-8986/abe450</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/2040-8986/abe450" target="_blank" >10.1088/2040-8986/abe450</a>

Result language
angličtina
Original language name
Bulk and interface second harmonic generation in the Si3N4 thin films deposited via ion beam sputtering
Original language description
The nonlinear optical second harmonic generation (SHG) in Si3N4 has attracted considerable attention due to a variety of promising applications in optoelectronics. However, reports on SHG in Si3N4 thin films and microstructures lead to diverse conclusions about the SHG origin, pointing towards the Si3N4 bulk, as well as to the Si3N4-Si interface. Here we report on the measurement of polarization-resolved angle-dependent SHG in Si3N4 thin films in the reflective mode. This mode allowed us to measure the nonlinear response of Si3N4 thin films on the Si single crystal substrate. By measuring three samples deposited via ion beam sputtering, we were able to analyze the bulk and interface contributions. We have demonstrated that apart from the bulk SHG, the Si3N4-Si interface contributes with a significant amount of SHG for the thin sample (600 nm). Our result provides a link between the previous measurements in the Si3N4 thin films and on the microstructures.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10306 - Optics (including laser optics and quantum optics)

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2021
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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