Copper-Enriched Nanostructured Conductive Thermoelectric Copper(I) Iodide Films Obtained by Chemical Solution Deposition on Flexible Substrates
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F46747885%3A24620%2F24%3A00012219" target="_blank" >RIV/46747885:24620/24:00012219 - isvavai.cz</a>
Result on the web
<a href="https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2023107/3079" target="_blank" >https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2023107/3079</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.15407/ujpe69.2.115" target="_blank" >10.15407/ujpe69.2.115</a>
Alternative languages
Result language
angličtina
Original language name
Copper-Enriched Nanostructured Conductive Thermoelectric Copper(I) Iodide Films Obtained by Chemical Solution Deposition on Flexible Substrates
Original language description
The objects of our research are flexible thin-film thermoelectric materials with nanostructured CuI layers 0.5–1.0 μm thick, fabricated by the chemical solution method Successive Ionic Layer Adsorption and Reaction (SILAR) on flexible polyethylene terephthalate and polyimide substrates. These cubic γ-CuI films differ from films obtained by other chemical solution methods, such as spin-coating, sputtering, and inject printing, in their low resistivity due to acceptor impurities of sulfur and oxygen introduced into CuI from aqueous precursor solutions during SILAR deposition. Energy barriers at the boundaries of 18–22 nm CuI nanograins and a large number of charge carriers inside the nanograins determine the transport properties in the temperature interval 295–340 K characterized by transitions from semiconductor to metallic behavior with increasing temperature, which are typical of nanostructured degenerate semi-conductors. Due to the resistivity of about 0.8 mΩ· m at 310 K and the Seebeck coefficient 101 μV/K, the thermoelectric power factor of the CuI film 1.0 μm thick on the polyimide substrate is 12.3 μW/(m · K2), which corresponds to modern thin-film p-type thermoelectric materials. It confirms the suitability of CuI films obtained by the SILAR method for the fabrication of promising inexpensive non-toxic flexible thermoelectric materials. © 2024, National Academy of Sciences of Ukraine. All rights reserved.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10300 - Physical sciences
Result continuities
Project
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Continuities
R - Projekt Ramcoveho programu EK
Others
Publication year
2024
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Ukrainian Journal of Physics
ISSN
2071-0186
e-ISSN
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Volume of the periodical
69
Issue of the periodical within the volume
2
Country of publishing house
UA - UKRAINE
Number of pages
9
Pages from-to
115-123
UT code for WoS article
001197053200007
EID of the result in the Scopus database
2-s2.0-85188680141