Application of the modern semiconductor devices based on the SiC

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23220%2F09%3A00501994" target="_blank" >RIV/49777513:23220/09:00501994 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Application of the modern semiconductor devices based on the SiC

Original language description

This paper presents research motivated by industrial demand for using power semiconductor devices based on SiC (Silicon Carbide). The paper deals with possibility of SiC devices application in traction vehicles. The main attention has been given to the topology of 3-phase voltage-source inverter with free- wheeling SiC schottky diode and 1-phase traction converter with middle frequency converter for auxiliary drives. The theoretical conclusions and simulation results are compared with experimental measurements on laboratory model with rated power of 2kVA

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

<a href="/en/project/GA102%2F09%2F1164" target="_blank" >GA102/09/1164: Interaction of power electronics systems with their environment</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2009

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

EPE 2009

ISBN

978-1-4244-4432-8

ISSN

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e-ISSN

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Number of pages

5

Pages from-to

1-5

Publisher name

EPE Association

Place of publication

Brussel

Event location

Barcelona

Event date

Sep 8, 2009

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

000275384102161