Some Results from Research and Development of Thin-Film Photovoltaic Cells

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23220%2F12%3A43915741" target="_blank" >RIV/49777513:23220/12:43915741 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Some Results from Research and Development of Thin-Film Photovoltaic Cells
Original language description
The current predominate photovoltaic (abbr PV) technology is based on the crystalline silicon (c- Si). Unfortunately the PV cells created by the c-Si have few disadvantages. Therefore, the researchers worldwide are developing an alternative material in effort to improve the PV cells performances. The thin-film materials offer promising alternative to the c-Si technology. The thin films are base of the PV 2nd and 3rd generation. The properties of these cells are very largely determined by properties of the thin-film materials. For this reason, it is absolutely necessary to deal with their detection. This paper is concerned with some of the experimental methods used in the research and development of the thin-film generation and with some results of this research. The first part is very shortly introduction to problematic of the thin-film PV cells. The second part of paper discusses one of specific experimental methods, with which we can meet in research and development of PV cells 2nd and 3rd generation - X-Ray diffraction. The last part presents some results from this method.
Czech name
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Czech description
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Type
O - Miscellaneous
CEP classification
JE - Non-nuclear power engineering, energy consumption and utilization
OECD FORD branch
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Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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