An impact of the boost diode selection on the overall efficiency of active power factor correctors
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23220%2F16%3A43929316" target="_blank" >RIV/49777513:23220/16:43929316 - isvavai.cz</a>
Result on the web
<a href="http://ieeexplore.ieee.org/document/7577270/" target="_blank" >http://ieeexplore.ieee.org/document/7577270/</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/AE.2016.7577270" target="_blank" >10.1109/AE.2016.7577270</a>
Alternative languages
Result language
angličtina
Original language name
An impact of the boost diode selection on the overall efficiency of active power factor correctors
Original language description
The paper focuses on a selection process of boost diodes for Active Power Factor Correctors (APFC) based on the Boost converter. The choice of the suitable boost diode plays crucial role for an efficiency of APFC. The main aim of the paper is devoted to theoretical and experimental comparison of the diodes. We have compared two ultra fast silicon diodes optimized for a Continuous Conduction Mode (CCM), soft-switching ultrafast rectifier and silicon carbide Schottky Barrier Diode (SBD). The experimental results show that the conduction losses are very similar but the switching losses are grossly different. In one case the diode optimized for soft-switching was not able to properly operate above 200W input power. It was caused likely due to the corrector works under CCM operation. Whereas, the SiC Schottky Barrier diodes are suitable for application in APFCs with high switching frequencies and working under CCM thanks to very small junction charge which is proved by this study.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
International Conference on Applied Electronics (AE 2016) : proceedings
ISBN
978-80-261-0601-2
ISSN
1803-7232
e-ISSN
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Number of pages
4
Pages from-to
187-190
Publisher name
IEEE
Place of publication
Piscataway
Event location
Pilsen, Czech Republic
Event date
Sep 6, 2016
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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