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Study of charge carrier transport properties and lifetimes in HR GaAs:Cr with Timepix3

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23220%2F21%3A43964056" target="_blank" >RIV/49777513:23220/21:43964056 - isvavai.cz</a>

  • Alternative codes found

    RIV/68407700:21670/21:00355199

  • Result on the web

    <a href="https://iopscience.iop.org/article/10.1088/1748-0221/16/12/C12023/meta" target="_blank" >https://iopscience.iop.org/article/10.1088/1748-0221/16/12/C12023/meta</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1088/1748-0221/16/12/C12023" target="_blank" >10.1088/1748-0221/16/12/C12023</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Study of charge carrier transport properties and lifetimes in HR GaAs:Cr with Timepix3

  • Original language description

    The response of a Timepix3 (256 × 256 pixels, pixel pitch 55 μm) detector with a 500 μm thick HR GaAs:Cr sensor was studied in proton beams of 125 MeV at the Danish Centre for Particle Therapy in Aarhus, Denmark and in a 120 GeV/c pion beam at the Super- Proton Synchrotron (SPS) at CERN. The sensor was biased at different voltages and irradiated at different angles. The readout chip was configured to operate in electron and hole collection modes. Measurements at grazing angles allowed to see elongated tracks with well-defined impact and exit points, so that charge carrier production depths could be determined in each pixel. We extracted the charge collection efficiencies and the charge carrier drift times as a function of the distance to the pixel plane. It was found that measured proton tracks are shorter in hole collection than in the case of electron collection, which is explained by the shorter lifetime of holes. At an angle of 60 degrees with respect to the sensor normal, the average track length in hole collection was ∼700 μm and 950 μm in electron collection mode. To understand the experimental findings, models describing the properties of HR GaAs:Cr were implemented into the Allpix2 simulation framework. We added previously presented experimental results describing the dependence of the electron drift velocity on the electric field and validated the response by comparing measurement and simulation for various X- and gamma-ray sources in the energy range of 10–60 keV. By comparison of the experimental and the simulated results, the mobility μh and the lifetime of holes τh were estimated as μh = (320 ± 10) cm2/V/s and τh = (4.5 ± 0.5) ns.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10303 - Particles and field physics

Result continuities

  • Project

    <a href="/en/project/EF16_019%2F0000766" target="_blank" >EF16_019/0000766: Engineering applications of microworld physics</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2021

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Journal of Instrumentation

  • ISSN

    1748-0221

  • e-ISSN

  • Volume of the periodical

    16

  • Issue of the periodical within the volume

    12

  • Country of publishing house

    GB - UNITED KINGDOM

  • Number of pages

    9

  • Pages from-to

    1-9

  • UT code for WoS article

    000758055400024

  • EID of the result in the Scopus database

    2-s2.0-85122859814