Effect of the gate electrode/electrolyte interface on OECT performance
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23220%2F22%3A43965442" target="_blank" >RIV/49777513:23220/22:43965442 - isvavai.cz</a>
Result on the web
<a href="https://ieeexplore.ieee.org/document/9812801" target="_blank" >https://ieeexplore.ieee.org/document/9812801</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/ISSE54558.2022.9812801" target="_blank" >10.1109/ISSE54558.2022.9812801</a>
Alternative languages
Result language
angličtina
Original language name
Effect of the gate electrode/electrolyte interface on OECT performance
Original language description
An organic electrochemical transistor (OECT) with a standard vertical topology and poly(3,4-ethylene-dioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as the active material of the channel is presented. It was found that the specific combination of the gate electrode material and electrolyte influences the transistor behavior. The effect of the different gate electrode/electrolyte interface on transistor performance were investigated by measuring the current-voltage characteristics, specifically the output and transfer characteristics, and the time-current dynamic characteristics. The influence of the type of the gate electrode/electrolyte interface on typical transistor parameters such as transconductance, ION/IOFF ratio and modulation response time (tON,tOFF) is also discussed.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
—
OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2022
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
2022 45th International Spring Seminar on Electronics Technology : /proceedings/
ISBN
978-1-66546-589-2
ISSN
2161-2536
e-ISSN
2161-2536
Number of pages
5
Pages from-to
1-5
Publisher name
IEEE
Place of publication
Piscaway
Event location
Vienna, Austria
Event date
May 11, 2022
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000853642200044