Atom-by-atom simulations of chemical vapor deposition of nanoporous hydrogenated silicon nitride

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F10%3A00503473" target="_blank" >RIV/49777513:23520/10:00503473 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Atom-by-atom simulations of chemical vapor deposition of nanoporous hydrogenated silicon nitride

Original language description

The paper reports molecular-dynamics simulations of particle-by-particle deposition process amorphous SiNH films prepared by plasma-enhanced chemical vapor deposition from SiHx and N radicals. We observe formation of a mixed zone (damaged layer) in the initial stages of film growth, and formation of nanopores in the film bulk. We investigate the effect of various process parameters on both (1) deposition characteristics, such as sticking coefficients, and (2) material characteristics, such as dimensionof the nanopores formed. The results provide detailed insight into the complex relationships between the process parameters and the characteristics of the deposited SiNH materials and exhibit an excellent agreement with the experimentally observed results.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BL - Plasma physics and discharge through gases

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2010

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Applied Physics

ISSN

0021-8979

e-ISSN

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Volume of the periodical

107

Issue of the periodical within the volume

8

Country of publishing house

US - UNITED STATES

Number of pages

9

Pages from-to

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UT code for WoS article

000277303200022

EID of the result in the Scopus database

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