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Maximum achievable N content in atom-by-atom growth of amorphous Si‒C‒N

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F20%3A43959301" target="_blank" >RIV/49777513:23520/20:43959301 - isvavai.cz</a>

  • Result on the web

    <a href="https://dx.doi.org/10.1021/acsami.0c08300" target="_blank" >https://dx.doi.org/10.1021/acsami.0c08300</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1021/acsami.0c08300" target="_blank" >10.1021/acsami.0c08300</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Maximum achievable N content in atom-by-atom growth of amorphous Si‒C‒N

  • Original language description

    The maximum achievable N content in Si‒C‒N is examined by combining ab-initio molecular dynamics simulations in a wide range of compositions and densities with experimental data. When and only when the simulation algorithm allows the formation and final presence of N2 molecules, the densities leading to the deepest local energy minima are in agreement with the experiment. The main attention is paid to unbonded N2 molecules, with the aim to predict and explain the maximum content of N bonded in the amorphous networks. There are significant differences resulting from different compositions, ranging from no N2 at the lowest-energy density of a Si3N4 (57 at.% of bonded N) to many N2 at the lowest-energy density of a-C3N4 (42 at.% of bonded N). The theoretical prediction is in agreement with experimental results of reactive magnetron sputtering at varied Si + C sputter target composition and N2 partial pressure.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    20506 - Coating and films

Result continuities

  • Project

    <a href="/en/project/GA19-14011S" target="_blank" >GA19-14011S: Design of novel functional materials, and pathways for their reactive magnetron sputtering, using advanced computer simulations</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2020

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    ACS Applied Materials and Interfaces

  • ISSN

    1944-8244

  • e-ISSN

  • Volume of the periodical

    12

  • Issue of the periodical within the volume

    37

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    8

  • Pages from-to

    41666-41673

  • UT code for WoS article

    000572965700072

  • EID of the result in the Scopus database

    2-s2.0-85091191944