Effects of Y and Ho doping on microstructure evolution during oxidation of extraordinary stable Hf‒B‒Si‒Y/Ho‒C‒N films up to 1500 °C
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F24%3A43970433" target="_blank" >RIV/49777513:23520/24:43970433 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1016/j.matdes.2023.112589" target="_blank" >https://doi.org/10.1016/j.matdes.2023.112589</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.matdes.2023.112589" target="_blank" >10.1016/j.matdes.2023.112589</a>
Alternative languages
Result language
angličtina
Original language name
Effects of Y and Ho doping on microstructure evolution during oxidation of extraordinary stable Hf‒B‒Si‒Y/Ho‒C‒N films up to 1500 °C
Original language description
Hard, and optically transparent amorphous Hf‒B‒Si‒Y/Ho‒C‒N films prepared by reactive pulsed dc magnetron co-sputtering were annealed up to 1500 °C in air and studied by combination of X-ray diffraction and transmission electron microscopy with aim to understand the Y- and Ho-doping effects on thermal stability and oxidation behavior. It was found that a three-layered microstructure developed in both annealed films. A fully oxidized layer formed at the top surface of cubic Hf(Y/Ho)O2 nanoparticles embedded in an amorphous SiOx-based matrix. The oxide layer is about 36 % thinner than undoped films with similar composition. A recrystallized structure formed at the bottom of both films composed mainly of Hf(Y/Ho)N and Si3N4. All Hf(Y/Ho)N in the middle layer was oxidized producing vertically oriented Hf(Y/Ho)O2 nanocolumns surrounded by nanocrystalline Si3N4. The Y- and Ho-doping was found to stabilize the cubic oxide structure and promote its (111) columnar texture. The oxidation mechanism of Si3N4 nanodomains occurs via formation of β-SiO2 first followed by its transformation to amorphous SiOx. It is suggested that substituting Hf with Y and Ho ions within the Hf(Y/Ho)O2 formed an anion vacancy defect structure to preserve charge neutrality affecting the oxidation mechanism in the doped films.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20506 - Coating and films
Result continuities
Project
<a href="/en/project/EH22_008%2F0004572" target="_blank" >EH22_008/0004572: Quantum materials for applications in sustainable technologies</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2024
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Materials & Design
ISSN
0264-1275
e-ISSN
1873-4197
Volume of the periodical
237
Issue of the periodical within the volume
JAN 2024
Country of publishing house
GB - UNITED KINGDOM
Number of pages
13
Pages from-to
1-13
UT code for WoS article
001142585100001
EID of the result in the Scopus database
2-s2.0-85180412683