Influence of Different Dopants on Physical Properties of ZnO for Photovoltaic Applications

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F10%3A00503377" target="_blank" >RIV/49777513:23640/10:00503377 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Influence of Different Dopants on Physical Properties of ZnO for Photovoltaic Applications
Original language description
The paper deals with influence of aluminum, gallium and scandium as dopants on structure, electrical and optical properties of zinc oxide (ZnO) thin films as a material suitable for photovoltaic applications. Mainly optical (integral transmittance, optical band-gap energy and refractive index), structural (biaxial lattice stress, micro-strains and crystallite size) and electrical (resistivity) properties were studied. Comparison between the physical properties of the materials with different dopant elements was performed.
Czech name
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Czech description
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Project
<a href="/en/project/1M06031" target="_blank" >1M06031: Materials and components for environment protection</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings 27th International Conference on Microelectronics
ISBN
978-1-4244-7198-0
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
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Publisher name
Electron Devices Society of the Institute of Electrical and Electronics Engineers, inc.
Place of publication
Niš
Event location
Niš, Serbia
Event date
Jan 1, 2010
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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