Analysis of single junction a-Si:H solar cells grown on different TCO's

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F12%3A43914746" target="_blank" >RIV/49777513:23640/12:43914746 - isvavai.cz</a>

Alternative codes found

RIV/49777513:23210/12:43914746

Result on the web

<a href="http://dx.doi.org/10.1016/j.vacuum.2011.07.038" target="_blank" >http://dx.doi.org/10.1016/j.vacuum.2011.07.038</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.vacuum.2011.07.038" target="_blank" >10.1016/j.vacuum.2011.07.038</a>

Result language

angličtina

Original language name

Analysis of single junction a-Si:H solar cells grown on different TCO's

Original language description

In consequence of previous investigation of individual transparent conductive oxide (TCO) and absorber layers a study was carried out on hydrogenated amorphous silicon (a-Si:H) solar cells with diluted intrinsic a-Si:H absorber layers deposited on glasssubstrates covered with different TCO films. In this paper we focused our attention on the influence of using different TCO's as a front contact in solar cells. Diode sputtered ZnO:Ga, textured and non-textured ZnO:Al and commercially fabricated ASAHI (SnO2:F) U-type TCO's have been used. The morphology and structure of ZnO films were altered by reactive ion etching (RIE) and post-deposition annealing. It can be concluded that the single junction a-Si:H solar cells with ZnO:Al films achieved comparableparameters as those prepared with commercially fabricated ASAHI U-type TCO's.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Publication year

2012

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Vacuum

ISSN

0042-207X

e-ISSN

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Volume of the periodical

86

Issue of the periodical within the volume

6

Country of publishing house

GB - UNITED KINGDOM

Number of pages

4

Pages from-to

765-768

UT code for WoS article

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EID of the result in the Scopus database

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