Preparation of Shell nanocrystalline Ga-doped ZnO Ultra-Thin Films by Sputtering

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F12%3A43915256" target="_blank" >RIV/49777513:23640/12:43915256 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Preparation of Shell nanocrystalline Ga-doped ZnO Ultra-Thin Films by Sputtering
Original language description
In this paper the possibility to form ultra-thin homogenous films doped by Ga (ZnO:Ga) by continual or sequential sputtering is presented. An influence of post-deposition annealing on crystalline structure of films was studied. The ability to create a highly consistent coverage (shell) of three dimensional nanostructures (GaP nanowires) by the sequential mode of sputtering was proven.
Czech name
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Czech description
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Project
<a href="/en/project/ED2.1.00%2F03.0088" target="_blank" >ED2.1.00/03.0088: Centre of the New Technologies and Materials</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of 28th INTERNATIONAL CONFERENCE ON MICROELETRONICS
ISBN
978-1-4673-0235-7
ISSN
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e-ISSN
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Number of pages
3
Pages from-to
269-271
Publisher name
Electron Devices Society of the Institute of Electrical and Electronics Engineers, INC.
Place of publication
Niš
Event location
Niš
Event date
May 13, 2012
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000309119600056

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