Optoelectronic properties of XYAs2 (X=Zn, Cd; Y=Si, Sn) chalcopyrite compounds
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F14%3A43922000" target="_blank" >RIV/49777513:23640/14:43922000 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Optoelectronic properties of XYAs2 (X=Zn, Cd; Y=Si, Sn) chalcopyrite compounds
Original language description
First principle calculations are performed to predict the electronic and optical properties of XYP2 (X=Zn, Cd; Y=Si, Ge, Sn) semiconductors chalcopyrite. Our calculated results are in excellent agreement with the available experimental values. The bandgap values decrease by changing the cations X from Zn to Cd as well as Y from Si to Ge to Sn in XYAs2. The Zn and Cd-d states contribute significantly in the density of states. The distribution of thevalence charge density indicates theexistence ofthe covalent bonding between cations and anion. Optical properties of these compounds are described in terms of refractive index and reflectivity. The predicted refractive indexes are in excellent agreement with the measured ones.CdGeAs2 possess a high birefringence compared to the other compounds.Reflectivity is above 50% in the visible and ultraviolet regions of energy spectrum. The nature of the direct band gap in these compounds and their high reflectivity in visible and ultraviolet (UV) reg
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BE - Theoretical physics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/ED2.1.00%2F03.0088" target="_blank" >ED2.1.00/03.0088: Centre of the New Technologies and Materials</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Optoelectronics and Advanced Materials
ISSN
1454-4164
e-ISSN
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Volume of the periodical
16
Issue of the periodical within the volume
1-2
Country of publishing house
RO - ROMANIA
Number of pages
7
Pages from-to
110-116
UT code for WoS article
000332347500019
EID of the result in the Scopus database
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