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Optoelectronic properties of XYAs2 (X=Zn, Cd; Y=Si, Sn) chalcopyrite compounds

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F14%3A43922000" target="_blank" >RIV/49777513:23640/14:43922000 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Optoelectronic properties of XYAs2 (X=Zn, Cd; Y=Si, Sn) chalcopyrite compounds

  • Original language description

    First principle calculations are performed to predict the electronic and optical properties of XYP2 (X=Zn, Cd; Y=Si, Ge, Sn) semiconductors chalcopyrite. Our calculated results are in excellent agreement with the available experimental values. The bandgap values decrease by changing the cations X from Zn to Cd as well as Y from Si to Ge to Sn in XYAs2. The Zn and Cd-d states contribute significantly in the density of states. The distribution of thevalence charge density indicates theexistence ofthe covalent bonding between cations and anion. Optical properties of these compounds are described in terms of refractive index and reflectivity. The predicted refractive indexes are in excellent agreement with the measured ones.CdGeAs2 possess a high birefringence compared to the other compounds.Reflectivity is above 50% in the visible and ultraviolet regions of energy spectrum. The nature of the direct band gap in these compounds and their high reflectivity in visible and ultraviolet (UV) reg

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BE - Theoretical physics

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/ED2.1.00%2F03.0088" target="_blank" >ED2.1.00/03.0088: Centre of the New Technologies and Materials</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2014

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Journal of Optoelectronics and Advanced Materials

  • ISSN

    1454-4164

  • e-ISSN

  • Volume of the periodical

    16

  • Issue of the periodical within the volume

    1-2

  • Country of publishing house

    RO - ROMANIA

  • Number of pages

    7

  • Pages from-to

    110-116

  • UT code for WoS article

    000332347500019

  • EID of the result in the Scopus database