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Engle-Vosko GGA Approach Within DFT Investigations of the Optoelectronic Structure of the Metal Chalcogenide Semiconductor CsAgGa2Se4

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F16%3A43928684" target="_blank" >RIV/49777513:23640/16:43928684 - isvavai.cz</a>

  • Result on the web

    <a href="http://dx.doi.org/10.1007/s11664-015-4192-8" target="_blank" >http://dx.doi.org/10.1007/s11664-015-4192-8</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1007/s11664-015-4192-8" target="_blank" >10.1007/s11664-015-4192-8</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Engle-Vosko GGA Approach Within DFT Investigations of the Optoelectronic Structure of the Metal Chalcogenide Semiconductor CsAgGa2Se4

  • Original language description

    Metal chalcogenide semiconductors are playing a significant role in the development of materials for energy and nanotechnology applications. First principle calculations were applied on CsAgGa2Se4 to investigate its optoelectronic structure and bonding characteristics, using full potential linear augmented plane wave (FP-LAPW) method within the frame work of generalized gradient approximations (GGA) and Engle-Vosko GGA functionals (EV-GGA). The band structure from EV-GGA shows that the valence band maximum (VBM) and conduction band minimum (CBM) are situated at I" with a band gap value of 2.15 eV. A mixture of orbitals from Ag 4p6/4d10, Se 3d10, Ga 4p1, Se 4p4 and Ga 4s2 states are playing a primary role to lead to a semiconducting character of the present chalcogenide. The charge density iso-surface shows a strong covalent bonding between Ag-Se and Ga-Se atoms. The imaginary part of dielectric constant reveals that the threshold (first optical critical point) energy of dielectric function occur 2.15 eV. It is obvious that with a direct large band gap and large absorption coefficient, CsAgGa2Se4 might be considered as potential material for photovoltaic applications.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BE - Theoretical physics

  • OECD FORD branch

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2016

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Journal of ELECTRONIC MATERIALS

  • ISSN

    0361-5235

  • e-ISSN

  • Volume of the periodical

    45

  • Issue of the periodical within the volume

    1

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    9

  • Pages from-to

    746-754

  • UT code for WoS article

    000367467800089

  • EID of the result in the Scopus database