Highly desirable semiconducting materials for mid-IR optoelectronics: Dilute bismide InAs1_xBix alloys

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F17%3A43950047" target="_blank" >RIV/49777513:23640/17:43950047 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.materresbull.2017.06.011" target="_blank" >http://dx.doi.org/10.1016/j.materresbull.2017.06.011</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.materresbull.2017.06.011" target="_blank" >10.1016/j.materresbull.2017.06.011</a>

Result language
angličtina
Original language name
Highly desirable semiconducting materials for mid-IR optoelectronics: Dilute bismide InAs1_xBix alloys
Original language description
We have performed a self-consistent full-potential linearized augmented plane wave (FP-LAPW) method within density functional theory (DFT) to investigate the structural, electronic and optical properties of the dilute bismide InAs1_xBix alloys (0 _ x _ 0.125) for mid-IR optoelectronics application
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10301 - Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Result description