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Optoelectronic and Thermoelectric Properties of Bi2OX2 (X = S, Se, Te) for Solar Cells and Thermoelectric Devices

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F18%3A43951218" target="_blank" >RIV/49777513:23640/18:43951218 - isvavai.cz</a>

  • Result on the web

    <a href="http://dx.doi.org/10.1007/s11664-018-6092-1" target="_blank" >http://dx.doi.org/10.1007/s11664-018-6092-1</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1007/s11664-018-6092-1" target="_blank" >10.1007/s11664-018-6092-1</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Optoelectronic and Thermoelectric Properties of Bi2OX2 (X = S, Se, Te) for Solar Cells and Thermoelectric Devices

  • Original language description

    We have explored the optoelectronic structure and related thermoelectric properties of Bi2OX2 (X = S, Se, Te) using density functional theory and spin–orbit coupling (SOC). We report herein calculations of the bandgap of these bismuth sulfides/oxysulfides to participate in the recent debate regarding such values. The generalized gradient approximation calculations corrected using the SOC scheme estimated bandgaps of 0.950 eV, 0.635 eV, and 0.441 eV for Bi2OS2, Bi2OSe2, and Bi2OTe2, respectively, in close agreement with experimental results and showing better accuracy compared with available theoretical calculations. This bandgap range shows the potential use of Bi2OX2 forsolar cell applications. Hence, we derived their optical and thermoelectric properties. Similarly to one of the parent materials, Bi2S3, a semiconductor with special photovoltaic and thermoelectric properties, the present derivatives Bi2OX2 show promising characteristics for exploration in the near future for use in solar cells and thermoelectric devices.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10301 - Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)

Result continuities

  • Project

    <a href="/en/project/EF15_003%2F0000358" target="_blank" >EF15_003/0000358: Computational and Experimental Design of Advanced Materials with New Functionalities</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2018

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    JOURNAL OF ELECTRONIC MATERIALS

  • ISSN

    0361-5235

  • e-ISSN

  • Volume of the periodical

    47

  • Issue of the periodical within the volume

    5

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    6

  • Pages from-to

    2513-2518

  • UT code for WoS article

    000428819300001

  • EID of the result in the Scopus database

    2-s2.0-85044767668