Nature of the metallic and in-gap states in Ni-doped SrTiO3

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F24%3A43972910" target="_blank" >RIV/49777513:23640/24:43972910 - isvavai.cz</a>

Result on the web

<a href="https://doi.org/10.1063/5.0183140" target="_blank" >https://doi.org/10.1063/5.0183140</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/5.0183140" target="_blank" >10.1063/5.0183140</a>

Result language

angličtina

Original language name

Nature of the metallic and in-gap states in Ni-doped SrTiO3

Original language description

Epitaxial thin films of SrTiO3(100) doped with 6% and 12% Ni are studied with resonant angle-resolved photoelectron spectroscopy at the Ti and Ni L2,3-edges. We find that the Ni doping shifts the valence band of n-doped pristine SrTiO3 toward the Fermi level (in the direction of p-doping) and reducing the bandgap. In the Ti t2g-derived mobile electron system (MES), the Ni doping depopulates the out-of-plane dxz/yz-derived bands, transforming the MES to two-dimensional and progressively reduces the electron density embedded in the in-plane dxy-derived bands as reflected in their Fermi momentum. Furthermore, the Ti and Ni L2,3-edge resonant photoemission is used to identify the Ni 3d impurity state in the vicinity of the valence-band maximum and decipher the full spectrum of the in-gap states originating from the Ni atoms, Ti atoms, and from their hybridized orbitals. Our experimental information about the dependence of the valence bands, MES, and in-gap states in Ni-doped SrTiO3 may help the development of this material toward its device applications associated with the reduced optical bandgap.

Czech name

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Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

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OECD FORD branch

10405 - Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis)

Project

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Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2024

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

APL Materials

ISSN

2166-532X

e-ISSN

2166-532X

Volume of the periodical

12

Issue of the periodical within the volume

1

Country of publishing house

US - UNITED STATES

Number of pages

9

Pages from-to

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UT code for WoS article

001147721100006

EID of the result in the Scopus database

2-s2.0-85183323440