Cleaved surfaces and homoepitaxial growth of InBi(001)

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F25%3A43976542" target="_blank" >RIV/49777513:23640/25:43976542 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1088/2053-1591/adfc2d" target="_blank" >https://doi.org/10.1088/2053-1591/adfc2d</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/2053-1591/adfc2d" target="_blank" >10.1088/2053-1591/adfc2d</a>

Result language
angličtina
Original language name
Cleaved surfaces and homoepitaxial growth of InBi(001)
Original language description
InBi is a semimetal with topologically non-trivial electronic surface states, which is also chemically and structurally compatible with conventional III-V semiconductors. Single crystal InBi has been grown and its (001) cleave surfaces studied. They do not conform to the single Bi-Bi cleave plane previously assumed in band structure studies of the material but instead expose both In- and Bi-terminated surface regions. Crystals cleaved in ultra-high vacuum have been used as substrates for ultra-low temperature homoepitaxy via periodic supply epitaxy (PSE) with alternate Bi and In fluxes. Homoepitaxial growth of good quality InBi was not achieved under these conditions. The 3D and 2D surface structures produced by PSE were studied by reflection high energy electron diffraction and atomic force microscopy. By studying InBi homoepitaxy for the first time, this work highlights the challenge of growing high quality InBi epilayers beyond the ultra-thin heteroepitaxial layers recently demonstrated [Molecules 2024, 29(12), 2825].
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
<a href="/en/project/EH22_008%2F0004572" target="_blank" >EH22_008/0004572: Quantum materials for applications in sustainable technologies</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2025
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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