Optoelectronic properties of GaAs and AlAs under temperature effect

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60076658%3A12520%2F13%3A43885147" target="_blank" >RIV/60076658:12520/13:43885147 - isvavai.cz</a>
Result on the web
<a href="http://www.sciencedirect.com/science/article/pii/S0030402612004664" target="_blank" >http://www.sciencedirect.com/science/article/pii/S0030402612004664</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.ijleo.2012.06.063" target="_blank" >10.1016/j.ijleo.2012.06.063</a>

Result language
angličtina
Original language name
Optoelectronic properties of GaAs and AlAs under temperature effect
Original language description
An application study of optoelectronic properties as a function of the temperature for GaAs and AlAs according to our model has been presented using empirical pseudopotential method (EPM). The structural phase transition can be seen easily from behaviorof the bonding character. The results are compared with the experimental data with reasonable agreement.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BO - Biophysics
OECD FORD branch
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Project
<a href="/en/project/ED2.1.00%2F01.0024" target="_blank" >ED2.1.00/01.0024: South Bohemian Research Center of Aquaculture and Biodiversity of Hydrocenoses</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Result description