Fourier Analysis of Memristor Excited by Sinusoidal Signal
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60162694%3AG43__%2F11%3A00446544" target="_blank" >RIV/60162694:G43__/11:00446544 - isvavai.cz</a>
Result on the web
<a href="http://vavtest.unob.cz/registr" target="_blank" >http://vavtest.unob.cz/registr</a>
DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Fourier Analysis of Memristor Excited by Sinusoidal Signal
Original language description
The paper deals with the analysis of flux-controlled memristor which is described by its unambiguous charge-flux constitutive relation. The memristor is excited by ideal sinusoidal voltage source in order to sense its typical i-v pinched hysteretic loop.Two equivalent schematics of the transformation of the exciting voltage into the current response are described. The first one is used for the spectral analysis of the current. It is shown that the corresponding Fourier series contains only the sine terms. It confirms the fact that the pinched hysteretic loops of ideal memristors must be always odd-symmetrical.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
MATHEMATICAL MODELS FOR ENGINEERING SCIENCE (MMES)
ISBN
978-1-61804-058-9
ISSN
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e-ISSN
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Number of pages
6
Pages from-to
154-159
Publisher name
IEEEAM
Place of publication
Tenerife, Spain
Event location
Tenerife, Spain
Event date
Jan 1, 2011
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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