Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60162694%3AG43__%2F13%3A00493985" target="_blank" >RIV/60162694:G43__/13:00493985 - isvavai.cz</a>

Alternative codes found

RIV/00216305:26220/13:PU103727

Result on the web

<a href="http://vavtest.unob.cz/registr" target="_blank" >http://vavtest.unob.cz/registr</a>

DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements

Original language description

The memory elements, memristor being the best known of them, driven by a periodical waveform exhibit the well-known pinched hysteresis loops. The hysteresis is caused by a memory effect which results in a nonzero area closed within the loop. This paper presents an analytical formula for the loop area. This formula is then applied to memory elements whose parameter-vs.-state maps are modeled in the polynomial form. The TiO2 memristor, a special subset of the above elements, is analyzed as a demonstrationexample.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2013

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Radioengineering

ISSN

1210-2512

e-ISSN

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Volume of the periodical

22

Issue of the periodical within the volume

1

Country of publishing house

CZ - CZECH REPUBLIC

Number of pages

4

Pages from-to

132-135

UT code for WoS article

000318052400015

EID of the result in the Scopus database

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