Some Fingerprints of Ideal Memristors

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60162694%3AG43__%2F14%3A00493957" target="_blank" >RIV/60162694:G43__/14:00493957 - isvavai.cz</a>
Alternative codes found
RIV/00216305:26220/13:PU103726
Result on the web
<a href="http://vavtest.unob.cz/registr" target="_blank" >http://vavtest.unob.cz/registr</a>
DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Some Fingerprints of Ideal Memristors
Original language description
Since there are many possible types of nonlinear charge-flux constitutive relations of ideal memristors, such elements can manifest various behavior, and the identification of typical memristor fingerprints from the measured data or simulator outputs canbe difficult in some cases. The aim of this paper is to reveal several fingerprints of ideal memristors, which extend the repertoire of hitherto published and currently well-known memristor fingerprints. These results can be useful for a clear and fastidentification of a system behavior that violates the principles of the operation of ideal memristors.
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
2013 IEEE International Symposium on Circuits and Systems (ISCAS 2013)
ISBN
978-1-4673-5762-3
ISSN
0271-4302
e-ISSN
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Number of pages
4
Pages from-to
201-204
Publisher name
IEEE
Place of publication
Peking, Čína
Event location
Beijing, China
Event date
Jan 1, 2013
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000332006800051

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