How Can the Hysteresis Loop of the Ideal Memristor Be Pinched?

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60162694%3AG43__%2F14%3A00519511" target="_blank" >RIV/60162694:G43__/14:00519511 - isvavai.cz</a>
Alternative codes found
RIV/00216305:26220/14:PU109772
Result on the web
<a href="http://vavtest.unob.cz/registr" target="_blank" >http://vavtest.unob.cz/registr</a>
DOI - Digital Object Identifier
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Result language
angličtina
Original language name
How Can the Hysteresis Loop of the Ideal Memristor Be Pinched?
Original language description
The hysteresis loop pinched at the origin of the v-i characteristic is the well-known fingerprint of the memristor excited by sinusoidal signal. This brief generalizes the present knowledge of the parameters of the pinched hysteresis loop for a periodical zero-dc driving signal described by an odd function of time. This brief concurrently brings new relationships between the parameter versus state map characteristics, the type of the excitation, and the type of loop pinching.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Project
<a href="/en/project/GA14-19865S" target="_blank" >GA14-19865S: Generalized higher-order elements</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
ISSN
1549-7747
e-ISSN
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Volume of the periodical
61
Issue of the periodical within the volume
7
Country of publishing house
US - UNITED STATES
Number of pages
5
Pages from-to
491-495
UT code for WoS article
000341574600007
EID of the result in the Scopus database
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