Hysteresis versus PSM of ideal memristors, memcapacitors, and meminductors

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60162694%3AG43__%2F16%3A00533019" target="_blank" >RIV/60162694:G43__/16:00533019 - isvavai.cz</a>
Alternative codes found
RIV/00216305:26220/16:PU120952
Result on the web
<a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=7574992" target="_blank" >http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=7574992</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1049/el.2016.2138" target="_blank" >10.1049/el.2016.2138</a>

Result language
angličtina
Original language name
Hysteresis versus PSM of ideal memristors, memcapacitors, and meminductors
Original language description
The classical fingerprint of the ideal memristor with differentiable constitutive relation has recently been extended with a piece of knowledge that the area of the pinched hysteresis loop of a memristor driven by sinusoidal signal with fixed amplitude and increasing frequency disappears with an integer power of the frequency. This fingerprint is extended to the memcapacitor and meminductor, and it is also shown that the way the hysteresis disappears can be determined directly from the behaviour of the parameter versus state map (PSM) of the element in the neighbourhood of the initial operating point.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
—

Project
<a href="/en/project/GA14-19865S" target="_blank" >GA14-19865S: Generalized higher-order elements</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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