The behaviour of Sn/Pd/n-GaAs metallization under thermal treatment
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F01%3A00004606" target="_blank" >RIV/60461373:22310/01:00004606 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
The behaviour of Sn/Pd/n-GaAs metallization under thermal treatment
Original language description
The behaviour of Sn/Pd/n-GaAs metallization under thermal treatment
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA102%2F99%2F0414" target="_blank" >GA102/99/0414: MOVPE prepared materials and structures for electronic and optoelectronic devices</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2001
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
2001 International Symposium on Electron Devices for Microwave and Optoelectronic Application, IEEE Catalog Number: 01TH8567
ISBN
0-7803-7049-X
ISSN
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e-ISSN
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Number of pages
6
Pages from-to
101-106
Publisher name
Institute of Electrical and Electronics Engineers, Ins
Place of publication
Hoes Lane NJ08855-1331, USA
Event location
Vienna University of Technology, Austria
Event date
Jan 1, 2001
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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