Optimization of Ge and Pd layers thickness in Ge/Pd/GaAs contact structures
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F03%3A00008154" target="_blank" >RIV/60461373:22310/03:00008154 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Optimization of Ge and Pd layers thickness in Ge/Pd/GaAs contact structures
Original language description
Optimization of Ge and Pd layers thickness in Ge/Pd/GaAs contact structures
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA102%2F00%2F0895" target="_blank" >GA102/00/0895: Waveguiding structures for integrated optics based on carbon and carbon nitride layers</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2003
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Sborník - 10th Electronic Devices and Systems Conference
ISBN
80-214-2452-4
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
311-314
Publisher name
VUT Brno
Place of publication
Brno
Event location
Brno
Event date
Oct 9, 2003
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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