Gd and Dy Implanted GaN for Spintronics
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F07%3A00018269" target="_blank" >RIV/60461373:22310/07:00018269 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Gd and Dy Implanted GaN for Spintronics
Original language description
The MOVPE GaN thin films deposited on sapphire substrates were implanted by different doses of Gd and Dy, analyzed by RBS, XRD and the magnetic properties of the resulting layers were examined. The coexistence of paramagnetism and ferromagnetism was identified in the studied concentration range 0.1-1 at.% of rare earth in.
Czech name
GaN implantovaný galliem a dysprosiem pro spintroniku
Czech description
GaN implantovaný galliem a dysprosiem pro spintroniku
Classification
Type
D - Article in proceedings
CEP classification
CA - Inorganic chemistry
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA104%2F06%2F0642" target="_blank" >GA104/06/0642: Thin Films of Magnetically Doped A(iii)N Semiconductors for Spin Electronics Applications</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2007
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Sborník příspěvků VI. ročníku konference Vrstvy a povlaky 2007
ISBN
978-80-969310-4-0
ISSN
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e-ISSN
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Number of pages
5
Pages from-to
121-125
Publisher name
Digital Graphic
Place of publication
Plzeň
Event location
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Event date
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Type of event by nationality
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UT code for WoS article
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