Investigation Properties of GaN Layers Doped with Er3+ and Er3+-Yb3+ Ions Using the Transmittance Measurement.
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F08%3A00020537" target="_blank" >RIV/60461373:22310/08:00020537 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Investigation Properties of GaN Layers Doped with Er3+ and Er3+-Yb3+ Ions Using the Transmittance Measurement.
Original language description
Investigation Properties of GaN Layers Doped with Er3+ and Er3+-Yb3+ Ions Using the Transmittance Measurement.
Czech name
Investigation Properties of GaN Layers Doped with Er3+ and Er3+-Yb3+ Ions Using the Transmittance Measurement.
Czech description
Investigation Properties of GaN Layers Doped with Er3+ and Er3+-Yb3+ Ions Usi
Classification
Type
D - Article in proceedings
CEP classification
JJ - Other materials
OECD FORD branch
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Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2008
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Photonics, Devices, and Systems
ISBN
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ISSN
0277-786X
e-ISSN
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Number of pages
6
Pages from-to
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Publisher name
Bellingham
Place of publication
Bellingham
Event location
Bellingham, UK
Event date
Aug 12, 2008
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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