Effects of Si interlayer on nickel and platinum ohmic contacts for n-type SiC
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F09%3A00021587" target="_blank" >RIV/60461373:22310/09:00021587 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Effects of Si interlayer on nickel and platinum ohmic contacts for n-type SiC
Original language description
Ni and Pt are common contact materials for n-type and p-type of silicon carbide, respectively. As deposited metals have to be annealed at least at 950C. Both metals react with SiC and silicides are created as a result; thus a certain region of subcontactSiC is decomposed. The mentioned reaction destroys semiconductor material under an ohmic contact and thus can influence behavior of the whole semiconductor structure. A silicon layer inserted in the metallization can reduce reactions of metals with SiCand minimize the decomposition of SiC. The aim of the contribution is testing of Si interlayer on electrical parameters of Ni/SiC and Pt/SiC structures. Both metallizations are prepared on n-type of SiC.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2009
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings ISSE 2009 32nd International Spring Seminar on Electronics Technology
ISBN
978-1-4244-4260-7
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
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Publisher name
VUT Brno
Place of publication
Brno
Event location
Brno
Event date
May 13, 2009
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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